Researchers from China Obtain High-quality InGaAs/GaAsSb Superlattice Structures

By AAPPS Bulletin. Published on 25 June 2015 in:
June 2015, News, , , ,

IInGaAs/GaAsSb superlattice structure is very attractive in photodetectors and light emitting devices. However, the growth of high quality GaAsSb alloys is a challenge. Recently, a research team from the Chinese Academy of Sciences (CAS) has successfully obtained high quality InGaAs/GaAsSb superlattice structures based on a broad analysis of growth mechanisms [1].

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